Lower electrode isolation in a double-wide trench
US6646297B2 · kind B2 · utility
175Cited by
2References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 26, 2000 |
| Grant date | Nov 11, 2003 |
| Priority date | — |
| Expiry date | Mar 15, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
The invention relates to a phase-change memory device. The device includes a double-wide trench into which a single film is deposited but two isolated lower electrodes are formed therefrom. Additionally a diode stack is formed that communicates to the lower electrode. Additionally, other isolated lower electrodes may be formed along a symmetry line that is orthogonal to the first two isolated lower electrodes. The present invention also relates to a method of making a phase-change memory device. The method includes forming two orthogonal and intersecting isolation structure s around a memory cell structure diode stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.