Method of forming contact to poly-filled trench isolation region
US6646320B1 · kind B1 · utility
0Cited by
4References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 21, 2002 |
| Grant date | Nov 11, 2003 |
| Priority date | — |
| Expiry date | Nov 21, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Existing polysilicon emitter technology is used to contact poly fill in a trench isolation structure. A standard single poly emitter window process is followed. An “emitter window” is masked directly over the polysilicon trench fill. Heavily doped single emitter poly is deposited and masked over the entire active region. The standard emitter drive then diffuses dopant through the emitter window into the undoped trench poly fill to provide an ohmic contact between the emitter poly and the trench poly fill. Contact to the emitter poly is made from overlying metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.