Method for fabricating a microcontact spring on a substrate

US6649441B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventor

• Alexander Ruf · Dresden, DE

Key dates

• Filing date: Oct 9, 2002
• Grant date: Nov 18, 2003
• Expiry date: Oct 9, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/48463
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

The invention relates to a method for fabricating a microcontact spring on a substrate (1) with at least one contact pad (2) and a first insulator layer (13) with a window above the contact pad (2).In order to enable the cost-effective contact-connection or wiring of a plurality of silicon chips at the wafer level simultaneously, the method according to the invention comprises the steps of: a) producing a via opening (19) in a second insulator layer (16) above a location to be contact-connected; b) producing a depression (20) in the second insulator layer (16); c) filling the via opening (19) and the depression (20) in the second insulator layer (16) with a metal; d) leveling the surface produced by the preceding steps, so that excess metal and insulator material are removed; e) selectively etching back a first predetermined thickness of the second insulator layer (16), so that the second insulator layer (16) remains with a second predetermined thickness, so that a section of the via opening (19) is maintained and serves as mechanical retention for the resulting microcontact spring.