Method for fabricating a III nitride film, and underlayer for fabricating a III nitride film and a method for fabricating the same underlayer
US6649493B2 · kind B2 · utility
6Cited by
5References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2001 |
| Grant date | Nov 18, 2003 |
| Priority date | — |
| Expiry date | Nov 7, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a Group III nitride film is provided, including the steps of preparing a substrate, forming an underfilm and then forming the Group III nitride film on the underfilm. The underfilm is a Group III nitride comprising at least one Group III element and includes at least 50 atomic percent of elemental Al with respect to all of the Group III elements of the Group III nitride of the underfilm. The surface of the underfilm is contoured (concave-convex) and includes flat regions, and less than 50% of the underfilm surface is occupied by the flat regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.