Method of etching a substrate
US6649527B2 · kind B2 · utility
0Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2002 |
| Grant date | Nov 18, 2003 |
| Priority date | — |
| Expiry date | Jun 14, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention relates to a method of etching a substrate in a chamber on an electrostatic chuck, which defines a gas cooling path at the substrate/chuck interface. The method includes electrostatically clamping the substrate on the chuck with gas in the gas path being at a first pressure; etching the substrate at a first power; detecting the end point for the etc; reducing the gas pressure to a second pressure at which the substrate floats on a gas; and over etching the wafer at a second power, which is lower than the first power.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.