Intermittent pulsed oxidation process
US6649537B1 · kind B1 · utility
6Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2001 |
| Grant date | Nov 18, 2003 |
| Priority date | — |
| Expiry date | Nov 19, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/913
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of forming a dielectric on a semiconductor substrate. A dielectric is grown at a substrate interface in a plurality of increments. Stress is relieved at the dielectric substrate interface between each increment. In another aspect, stress relief is performed by annealing the substrate. The annealing is performed by placing the substrate in an inert environment and by raising the temperature surrounding the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.