Magnetic devices with a ferromagnetic layer having perpendicular magnetic anisotropy and an antiferromagnetic layer for perpendicularly exchange biasing the ferromagnetic layer
US6650513B2 · kind B2 · utility
44Cited by
3References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2001 |
| Grant date | Nov 18, 2003 |
| Priority date | — |
| Expiry date | Mar 25, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1114
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention is a magnetic device that includes a ferromagnetic/antiferromagnetic (F/AF) structure wherein the ferromagnetic layer is perpendicularly exchange biased by the antiferromagnetic layer. The invention has application to perpendicular magnetic recording disks and magnetic tunnel junction devices used as read heads for disk drives and memory cells in magnetic memory arrays.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.