Compact analog-multiplexed global sense amplifier for rams
US6650572B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 21, 2002 |
| Grant date | Nov 18, 2003 |
| Priority date | — |
| Expiry date | Aug 21, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/104
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The method and system of the present invention superimposes read and write operations by connecting the global bit lines that are not selected to the Vdd. As a result, the respective local sense amplifiers for the non-selected global bit lines will just read and refresh the respective memory cells. This new approach results in smaller local sense amplifiers and one global sense amplifiers for several memory cells (and local sense amplifiers).In one embodiment, eight global bit lines are shared by one global sense amplifier and multiplexed to achieve the advantages of the present invention. Due to an analog global multiplexing scheme used by the present invention, only one global bit line pair generates voltage development as an input to a respective local sense amplifier during a write operation, while the other three global bit line pairs are disconnected from their respective local sense amplifiers and thus have no voltage development. The global bit line pairs with no voltage development generate zero voltage development on the local bit lines and the respective activated sense amplifiers amplify only the cell data which reassembles a read and refresh operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.