Semiconductor laser element having excellent light confinement effect and method for producing the semiconductor laser element
US6650672B2 · kind B2 · utility
6Cited by
4References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2001 |
| Grant date | Nov 18, 2003 |
| Priority date | — |
| Expiry date | Mar 26, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/11
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser element including: a three-dimensional photonic crystal structure which has a light confining effect and includes alternating first and second refractive index changing layers, where refractive index of light periodically changes in a first direction in each first refractive index changing layer and periodically changes in a second direction in each second refractive index changing layer; and an active unit which is disposed in a portion having a predetermined refractive index inside the three-dimensional photonic crystal structure, and generates a laser beam in response to reception of electric power.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.