Electron-beam processed films for microelectronics structures
US6652922B1 · kind B1 · utility
12Cited by
19References
16Claims
0Family size
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Key dates
| Filing date | May 23, 1996 |
| Grant date | Nov 25, 2003 |
| Priority date | — |
| Expiry date | Jul 25, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved method for producing substrates coated with dielectric films for use in microelectronic applications wherein the films are processed by exposing the coated substrate surfaces to a flux of electron beam. Substrates cured via electron beam exposure possess superior dielectric properties, density, uniformity, thermal stability, and oxygen stability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.