Structure and method for controlling band offset and alignment at a crystalline oxide-on-semiconductor interface
US6652989B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2001 |
| Grant date | Nov 25, 2003 |
| Priority date | — |
| Expiry date | Jul 20, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12618
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A crystalline oxide-on-semiconductor structure and a process for constructing the structure involves a substrate of silicon, germanium or a silicon-germanium alloy and an epitaxial thin film overlying the surface of the substrate wherein the thin film consists of a first epitaxial stratum of single atomic plane layers of an alkaline earth oxide designated generally as (AO)n and a second stratum of single unit cell layers of an oxide material designated as (A′BO3)m so that the multilayer film arranged upon the substrate surface is designated (AO)n(A′BO3)m wherein n is an integer repeat of single atomic plane layers of the alkaline earth oxide AO and m is an integer repeat of single unit cell layers of the A′BO3 oxide material. Within the multilayer film, the values of n and m have been selected to provide the structure with a desired electrical structure at the substrate/thin film interface that can be optimized to control band offset and alignment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.