Thyristor-based device over substrate surface
US6653174B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2001 |
| Grant date | Nov 25, 2003 |
| Priority date | — |
| Expiry date | Dec 17, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a thyristor is manufactured in a manner that reduces or eliminates manufacturing difficulties commonly experienced in the formation of such devices. According to an example embodiment of the present invention, a thyristor is formed having some or all of the body of the thyristor extending above a substrate surface of a semiconductor device. The semiconductor device includes at least one transistor having source/drain regions formed in the substrate prior to the formation of the thyristor. One or more layers of material are deposited on the substrate surface and used to form a portion of a body of the thyristor that includes anode and cathode end portions. Each end portion is formed having a base region and an emitter region, and at least one of the end portions includes a portion that is in the substrate and electrically coupled to the transistor. A control port is formed capacitively coupled to at least one of the base regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.