Semiconductor device comprising high density integrated circuit having a large number of insulated gate field effect transistors
US6653690B1 · kind B1 · utility
6Cited by
8References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 30, 1998 |
| Grant date | Nov 25, 2003 |
| Priority date | — |
| Expiry date | Apr 24, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/315
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
It is a purpose of the invention to provide a semiconductor device comprising a high density integrated circuit having a large number of insulated gate field effect transistors having minute size and improved performance and uniformity. The source contact resistance is set in a value smaller than that of the drain contact resistance by making the diameter of a source contact of an insulated gate field effect transistor larger than that of the drain contact, so as to improve the current driving capability of the transistor and to reduce the variation in the capability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.