Reference voltage semiconductor
US6653694B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 19, 2001 |
| Grant date | Nov 25, 2003 |
| Priority date | — |
| Expiry date | Sep 19, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/84
Abstract
A reference voltage circuit with a small change in output voltage with respect to temperature change has an enhancement mode MOS and a depletion mod MOS, a polarity of a gate of the enhancement mod MOS is opposite that of the transistor, and a polarity of a gate of the depletion mode MOS is the same as that of the transistor, and both the enhancement mode MOS and the depletion mode MOS are of the buried channel type. A dose amount of a counter channel doping impurity for setting a predetermined threshold is substantially the same for the enhancement mode MOS and the depletion mode MOS. Thus, threshold voltages and degrees of change of mutual conductance with temperature can be made the same for both MOS transistors and it is possible to provide the reference voltage circuit with a small change of the output voltage with respect to a temperature change.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.