Integration of dual workfunction metal gate CMOS devices

US6653698B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Byoung Hun Lee · Wappingers Falls, US
• Effendi Leobandung · Stormville, US
• Ghavam G. Shahidi · Pound Ridge, US

Key dates

• Filing date: Dec 20, 2001
• Grant date: Nov 25, 2003
• Expiry date: Dec 20, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/01

Abstract

A dual work function CMOS metal gate device provides a composite metal gate electrode structure. The composite metal gate structure includes a bulk metal and a thin metal layer having an appropriate work function for the transistor type and desired threshold voltage, VT. Both N-channel and P-channel transistors are formed to have distinct threshold voltages by incorporating the metal material having the appropriate work function for the desired VT into the composite metal gate electrode. The two different electrodes of the N-channel and P-channel transistors are electrically connected by means of the bulk metal.