Semiconductor pressure sensor having strain gauge and circuit portion on semiconductor substrate
US6653702B2 · kind B2 · utility
14Cited by
16References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 30, 2001 |
| Grant date | Nov 25, 2003 |
| Priority date | — |
| Expiry date | May 30, 2021 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0778
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor pressure sensor includes a SOI substrate composed of first and second silicon substrates. A diaphragm portion is formed by the first silicon substrate as a bottom of a recess portion formed in the second silicon substrate. Strain gauges are formed on the diaphragm portion, and a circuit portion is formed on the first silicon substrate at a region other than the diaphragm portion. A LOCOS film for isolating the strain gauges from the circuit portion is formed on the first silicon substrate outside the outermost peripheral portion of the diaphragm portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.