Test structure for metal CMP process control
US6654108B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2001 |
| Grant date | Nov 25, 2003 |
| Priority date | — |
| Expiry date | Jan 8, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/34
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A test structure is presented to be formed on a patterned structure and to be used for controlling a CMP process applied to the patterned structure, which has a pattern area formed by spaced-apart metal-containing regions representative of real features of the patterned structure. The test structure thus undergoes the same CMP processing as the pattern area. The test structure comprises at least two structures aligned along a vertical axis in a spaced-apart parallel relationship, each structure comprising at least one pattern zone containing spaced-apart metal regions, the test structure thereby comprising at least one pair of vertically aligned upper and lower pattern zones. The upper and lower pattern zones in each pair have different patterns oriented with respect to each other such that the metal regions of the lower pattern are located underneath the spaces between the metal regions of the upper pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.