Semiconductor laser device and manufacturing method thereof
US6654397B2 · kind B2 · utility
0Cited by
4References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 30, 2001 |
| Grant date | Nov 25, 2003 |
| Priority date | — |
| Expiry date | Jun 12, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An n-GaAs current blocking layer is formed on a p-AlGaInP first cladding layer, on sides of a ridge portion and in a region on the upper surface of the ridge portion above a window region. Raised portions are formed in a p-GaAs cap layer in regions in the vicinity of facets, while raised regions are formed in the regions of a first electrode in the vicinity of the facets. A second electrode having a thickness larger than the height of the raised regions is formed on the region between the raised regions of the first electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.