Layered hard mask and dielectric materials and methods therefor
US6656532B2 · kind B2 · utility
4Cited by
5References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 17, 2001 |
| Grant date | Dec 2, 2003 |
| Priority date | — |
| Expiry date | Mar 6, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A damascene structure includes a hard mask layer that is applied in a liquid phase to a line dielectric layer. Contemplated hard mask layers comprise a Si—N bond and are densified such that the etch resistivity of the hard mask layer is greater than the etch resistivity of the line dielectric layer and the via dielectric layer in the damascene structure. Particularly preferred hard mask layers include polyperhydrosilazane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.