Solid state imaging sensor in a submicron technology and method of manufacturing and use of a solid state imaging sensor
US6656760B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2001 |
| Grant date | Dec 2, 2003 |
| Priority date | — |
| Expiry date | Mar 14, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
A detector and a camera system for electromagnetic radiation being integrated in a solid state substrate are disclosed. Said substrate comprises a first region of a first conductivity and a second region of a second conductivity, said first region being adjacent to said second region, and said first and second region forming a detection junction, at least part of said junction being substantially orthogonal with respect to the plane of the surface of the substrate above said detection junction. The camera system comprises a configuration of pixels in an imaging sensor being integrated in a solid state substrate, essentially each of the pixels comprising a region of a first conductivity type being at least partly surrounded by a region of a second conductivity type, thereby forming a junction region, and wherein the region of the first conductivity type includes at least one contact area. The camera system further comprises means for collecting charge carriers being generated by the radiation impinging on said substrate at least in said region of said first conductivity type and in said junction region, in said contact area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.