Process for integration of a high dielectric constant gate insulator layer in a CMOS device
US6656764B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 2002 |
| Grant date | Dec 2, 2003 |
| Priority date | — |
| Expiry date | May 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
Abstract
A CMOS device structure, and a method of fabricating the CMOS device, featuring a gate insulator layer comprised of a high k metal oxide layer, has been developed. The process features formation of recessed, heavily doped source/drain regions, and of vertical, polysilicon LDD spacers, prior to deposition of the high k metal oxide layer. Removal of a silicon nitride shape, previously used as a mask for definition of the recessed regions, which in turn are used for accommodation of the heavily doped source/drain regions, provides the space to be occupied by the high k metal oxide layer. The integrity of the high k, gate insulator layer, butted by the vertical polysilicon spacers, and overlying a channel region provided by the non-recessed portion of the semiconductor substrate, is preserved via delayed deposition of the metal oxide layer, performed after high temperature anneals such as the activation anneal for heavily doped source/drain regions, as well as the anneal used for metal silicide formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.