Inventor · Sanxing, TW

Chien-Hao Chen

152Patents
14h-index
217Co-inventors
89Inventor score

Filing activity: Jan 11, 2002 → Jun 7, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US6656764B1 Process for integration of a high dielectric constant gate insulator layer in a CMOS device Electricity 75 Expired
US7259050B2 Semiconductor device and method of making the same Electricity 66 Expired
US7052946B2 Method for selectively stressing MOSFETs to improve charge carrier mobility Electricity 37 Expired
US6624090B1 Method of forming plasma nitrided gate dielectric layers Electricity 29 Expired
US7871915B2 Method for forming metal gates in a gate last process Electricity 29 Active
US7164163B2 Strained transistor with hybrid-strain inducing layer Electricity 26 Expired
US8836049B2 Semiconductor structure and process thereof Electricity 23 Active
US6566205B1 Method to neutralize fixed charges in high K dielectric Electricity 19 Expired
US6767847B1 Method of forming a silicon nitride-silicon dioxide gate stack Electricity 19 Expired
US6759302B1 Method of generating multiple oxides by plasma nitridation on oxide Emerging Cross-Sectional Technologies 19 Expired
US8537140B2 Illuminated touch sensitive surface module and illuminated device thereof Physics 18 Active
US7157350B2 Method of forming SOI-like structure in a bulk semiconductor substrate using self-organized atomic migration Electricity 17 Expired
US7118974B2 Method of generating multiple oxides by plasma nitridation on oxide Emerging Cross-Sectional Technologies 17 Expired
US7232730B2 Method of forming a locally strained transistor Electricity 15 Expired
US8679962B2 Integrated circuit metal gate structure and method of fabrication Electricity 14 Active
US8796695B2 Multi-gate field-effect transistor and process thereof Electricity 14 Active
US7223647B2 Method for forming integrated advanced semiconductor device using sacrificial stress layer Emerging Cross-Sectional Technologies 14 Expired
US7528028B2 Super anneal for process induced strain modulation Electricity 12 Active
US8383502B2 Integrated high-K/metal gate in CMOS process flow Electricity 11 Active
US7482211B2 Junction leakage reduction in SiGe process by implantation Electricity 10 Active
US8193586B2 Sealing structure for high-K metal gate Electricity 7 Active
US8674433B2 Semiconductor process Electricity 7 Active
US8003507B2 Method of integrating high-K/metal gate in CMOS process flow Electricity 7 Active
US7138317B2 Method of generating multiple oxides by plasma nitridation on oxide Emerging Cross-Sectional Technologies 6 Expired
US6914313B2 Process for integration of a high dielectric constant gate insulator layer in a CMOS device Emerging Cross-Sectional Technologies 6 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.