Nanocrystal flash memory device and manufacturing method therefor
US6656792B2 · kind B2 · utility
59Cited by
5References
32Claims
0Family size
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Key dates
| Filing date | Mar 1, 2002 |
| Grant date | Dec 2, 2003 |
| Priority date | — |
| Expiry date | Mar 1, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A Flash memory is provided having a trilayer structure of rapid thermal oxide/germanium (Ge) nanocrystals in silicon dioxide (SiO2)/sputtered SiO2 cap with demonstrated via capacitance versus voltage (C-V) measurements having memory hysteresis due to Ge nanocrystals in the middle layer of the trilayer structure. The Ge nanocrystals are synthesized by rapid thermal annealing of a co-sputtered Ge+SiO2 layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.