Carbide emitter mask etch stop

US6656811B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Leland Swanson · McKinney, US
• Gregory E. Howard · Dallas, US

Key dates

• Filing date: Dec 21, 2001
• Grant date: Dec 2, 2003
• Expiry date: Dec 21, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

Bipolar transistors and methods for fabricating bipolar transistors are disclosed wherein an emitter-base dielectric stack is formed between emitter and base structures, comprising a carbide layer situated between first and second oxide layers. The carbide layer provides an etch stop for etching the overlying oxide layer, and the underlying oxide layer provides an etch stop for etching the carbide layer to form an emitter-base contact opening.