Process for producing semiconductor and apparatus for production
US6656838B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2002 |
| Grant date | Dec 2, 2003 |
| Priority date | — |
| Expiry date | May 21, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
To provide a process for producing a semiconductor, which can form a CVD film at a high film-forming rate with a good step coverage, good uniformities of film forming rate and sheet resistance in the in-plane region of a wafer and a good reproducibility at every wafers, and an apparatus for treating a semiconductor for the process. In a treating chamber kept under pressure of 1,000-50,000 Pa, a wafer is placed on a susceptor, and a film is deposited on the wafer by heating the wafer at 500° C. or higher by a plate-shaped heater through the susceptor, while supplying a feed gas into the treating chamber at 500-50,000 sccm through gas injection nozzles provided near the center of a shower plate provided approximately in parallel with the wafer at a distance of 1-20 mm from the wafer and kept at a temperature of 200° C. or lower.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.