Tadanori Yoshida
17Patents
7h-index
41Co-inventors
62Inventor score
Filing activity: Sep 7, 1999 → Jun 1, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6770528B2 | Method of forming a data-storing capacitive element made in an insulating film on a semiconductor substrate | Electricity | 14 | Expired |
| US8476138B2 | Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device | Electricity | 11 | Active |
| US7190031B2 | Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device | Electricity | 10 | Expired |
| US6764916B1 | Manufacturing method for semiconductor device | Electricity | 7 | Expired |
| US6632721B1 | Method of manufacturing semiconductor devices having capacitors with electrode including hemispherical grains | Electricity | 7 | Expired |
| US6524927B1 | Semiconductor device and method of fabricating the same | Electricity | 7 | Expired |
| US6403479B1 | Process for producing semiconductor and apparatus for production | Electricity | 7 | Expired |
| US6656838B2 | Process for producing semiconductor and apparatus for production | Electricity | 6 | Expired |
| US6717202B2 | HSG semiconductor capacitor with migration inhibition layer | Electricity | 5 | Expired |
| US7972920B2 | Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device | Electricity | 5 | Active |
| US7495289B2 | Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device | Electricity | 3 | Active |
| US7701020B2 | Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device | Electricity | 3 | Active |
| US6870224B2 | MOS transistor apparatus and method of manufacturing same | Electricity | 2 | Expired |
| US7161215B2 | Semiconductor memory device and method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device | Electricity | 2 | Expired |
| US6444405B1 | Method of forming conductive layers in the trenches or through holes made in an insulating film on a semiconductors substrate | Electricity | 1 | Expired |
| US6905928B2 | MOS transistor apparatus and method of manufacturing same | Electricity | 1 | Expired |
| US6821871B2 | Method for manufacturing semiconductor device, substrate treatment method, and semiconductor manufacturing apparatus | Chemistry; Metallurgy | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.