Process for electron beam lithography, and electron-optical lithography system
US6657211B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 16, 2001 |
| Grant date | Dec 2, 2003 |
| Priority date | — |
| Expiry date | Apr 4, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31776
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention relates to a method for electron beam lithography that consists of a combination of electron beam projection lithography and electron beam writing. In a first step, the exposure of the substrate takes place by imaging of a mask. In a second step, structures not present on the mask are written on the substrate by electron beam writing. The invention furthermore relates to an electron-optical lithography system that can be used both for projection lithography and for electron beam writing. The system has a projective system by means of which a mask plane can be imaged on a reduced scale in a substrate plane. The system furthermore has an electron-optical illumination system by means of which selectively either a large field in the mask plane can be illuminated or the electron beam can be focused in the mask plane or can be shaped to a desired beam profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.