Thin film piezoelectric resonator
US6657363B1 · kind B1 · utility
100Cited by
13References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 8, 2000 |
| Grant date | Dec 2, 2003 |
| Priority date | — |
| Expiry date | Nov 8, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/0428
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The layer of the cover electrode, or an additional layer on the cover electrode is formed with holes, preferably produced lithographically, or similar structures. The structures have a mean spacing from one another which is smaller than the wavelength for operating the component. The structures are preferably distributed with a uniformity sufficient to effect a uniform change in the mass of the layer per area, thus producing a specific setting of the resonant frequency/ frequencies, and are preferably, on the other hand, distributed so irregularly that diffraction effects are avoided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.