P-i-n transit time silicon-on-insulator device

US6660616B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Jeffrey A. Babcock · Neufahrn, DE
• Gregory E. Howard · Dallas, US
• Angelo Pinto · Augusta, IT
• Phillipp Steinmann · Munich, DE

Key dates

• Filing date: Jan 23, 2002
• Grant date: Dec 9, 2003
• Expiry date: Jan 23, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D8/50

Abstract

A transit time device (15, 15′) in a silicon-on-insulator (SOI) technology is disclosed. An anode region (18) and a cathode region (20) are formed on opposing ends of an epitaxial layer (14), with an intrinsic or lightly-doped region (22) disposed therebetween. Sinker structures (30p, 30n) are formed in an overlying epitaxial layer (24) over and in contact with the anode and cathode regions (18, 20). A charge injection terminal may be formed in a sinker structure (32n) in the overlying epitaxial layer (24), if the transit time device (15′) is of the three-terminal type. The device (15, 15′) has extremely low parasitic capacitance to substrate, because of the buried oxide layer (12) underlying the intrinsic region (22).