Method of fabricating a copper damascene structure
US6660639B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2002 |
| Grant date | Dec 9, 2003 |
| Priority date | — |
| Expiry date | Oct 7, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F3/00
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention provides a method of removing copper overlaying a tantalum-based barrier layer during the fabrication of a copper damascene structure having a plurality of copper lines. The method includes providing a chemical-mechanical polishing slurry and polishing the copper layer using the slurry until the tantalum-based barrier layer is exposed. The slurry includes an oxidizing agent that releases free radicals and a non-chelating free radical quencher that retards the corrosion of said copper lines during chemical mechanical polishing. Preferred non-chelating free radical quenchers are ascorbic acid, thiamine, 2-propanol, and alkyl glycols. The present invention also provides copper damascene structures formed according to the method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.