Ion implantation system having an energy probe
US6661017B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | May 29, 2002 |
| Grant date | Dec 9, 2003 |
| Priority date | — |
| Expiry date | May 29, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/30433
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides improved ion implantation systems and methods in which a high voltage probe is utilized in an ion implantation system to directly measure energy of an ion beam incident on a substrate. More particularly, an exemplary ion implantation system can include an ion source maintained at a high electric potential that generates ions, and a plurality of extraction electrodes that can accelerate the ions to a desired energy. The system further includes an end-station, maintained at ground electric potential, in which a wafer holding for positioning a wafer in the path of an ion beam is disposed. The ion implantation system is further characterized by a high energy probe disposed between a high voltage terminus of the ion source and ground for directly measuring the energy of the ions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.