Low dielectric constant materials prepared from photon or plasma assisted chemical vapor deposition and transport polymerization of selected compounds
US6663973B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 1999 |
| Grant date | Dec 16, 2003 |
| Priority date | — |
| Expiry date | Dec 20, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Intermetal dielectric (IMD) and interlevel dielectric (ILD) that have dielectric constants (K) ranging from 2.0 to 2.6 are prepared from plasma or photon assisted CVD (PACVD) or transport polymerization (TP). The low K dielectric (LKD) materials are prepared from PACVD or TP of some selected siloxanes and F-containing aromatic compounds. The thin films combine barrier and adhesion layer functions with low dielectric constant functions, thus eliminating the necessity for separate adhesion and barrier layers, and layers of low dielectric constant. The LKD materials disclosed in this invention are particularly useful for <0.18 &mgr;m ICs, or when copper is used as conductor in future ICs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.