Controlled aging of photoresists for faster photospeed
US6664023B2 · kind B2 · utility
2Cited by
9References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2001 |
| Grant date | Dec 16, 2003 |
| Priority date | — |
| Expiry date | Jun 14, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/16
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for the controlled aging of a photoresist which provides an aged photoresist that has a targeted photospeed which is faster than a conventional unaged photoresist is provided. Specifically, the inventive method includes the step of aging a solution containing at least a photoresist resin composition at a temperature below the thermal decomposition of the photoresist resin composition, but not below 20° C., for a time period that is effective in achieving a targeted photospeed which is faster than a photospeed of an unaged photoresist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.