Method of film deposition, and fabrication of structures
US6664186B1 · kind B1 · utility
81Cited by
7References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 29, 2000 |
| Grant date | Dec 16, 2003 |
| Priority date | — |
| Expiry date | Sep 29, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24917
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating aluminum oxide films utilizing aluminum alkoxide precursors is described. The aluminum oxide film is formed by (a) providing an aluminum alkoxide precursor that is dissolved, emulsified or suspended in a liquid; (b) providing a vapor generated from the aluminum alkoxide precursor; and (c) depositing an aluminum oxide film:on the substrate at a temperature greater than 500° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.