ZnO crystal growth method, ZnO crystal structure, and semiconductor device using ZnO crystal
US6664565B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 25, 2000 |
| Grant date | Dec 16, 2003 |
| Priority date | — |
| Expiry date | Feb 1, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02631
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A ZnO crystal growing method having the steps of: growing a low temperature growth ZnO layer on a sapphire substrate at a temperature lower than a single crystal ZnO growth temperature; thermally processing the low temperature growth ZnO layer at a temperature near to a growth temperature of a high temperature growth single crystal ZnO layer higher than the growth temperature low temperature growth ZnO layer; and growing a high temperature growth single crystal ZnO layer on the low temperature growth ZnO layer at a temperature higher than the growth temperature of the of the low temperature growth ZnO layer. ZnO crystal of good quality with a reduced number of crystal defects can be grown on a sapphire substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.