Polymer thin-film transistor with contact etch stops
US6664576B1 · kind B1 · utility
3Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2002 |
| Grant date | Dec 16, 2003 |
| Priority date | — |
| Expiry date | Sep 25, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/60
Abstract
A method and structure of forming a vertical polymer transistor structure is disclosed having a first conductive layer, filler structures co-planar with the first conductive layer, a semiconductor body layer above the first conductive layer, a second conductive layer above the semiconductor body layer, and an etch stop strip positioned between a portion of the first conductive layer and the semiconductor body layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.