Ferroelectric memory device and method of forming the same
US6664578B2 · kind B2 · utility
18Cited by
8References
14Claims
0Family size
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Key dates
| Filing date | Apr 30, 2002 |
| Grant date | Dec 16, 2003 |
| Priority date | — |
| Expiry date | Apr 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/688
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The method of forming a ferroelectric memory device includes forming capacitor patterns over a substrate, each capacitor pattern having an adhesive assistant pattern, a lower electrode, a ferroelectric pattern, and an upper electrode. An oxygen barrier layer is formed over the substrate and is etched to expose a sidewall of the ferroelectric pattern but not a sidewall of the adhesive assistant pattern. Then, a thermal process for curing ferroelectricity of the ferroelectric pattern is performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.