Kyu-Mann Lee
13Patents
6h-index
12Co-inventors
55Inventor score
Filing activity: Jul 6, 2001 → Sep 24, 2007
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6699725B2 | Methods of fabricating ferroelectric memory devices having a ferroelectric planarization layer | Electricity | 39 | Expired |
| US7560760B2 | Ferroelectric memory devices having expanded plate lines | Electricity | 20 | Active |
| US6664578B2 | Ferroelectric memory device and method of forming the same | Electricity | 18 | Expired |
| US6952364B2 | Magnetic tunnel junction structures and methods of fabrication | Electricity | 15 | Expired |
| US6815226B2 | Ferroelectric memory device and method of forming the same | Electricity | 9 | Expired |
| US6952028B2 | Ferroelectric memory devices with expanded plate line and methods in fabricating the same | Electricity | 6 | Expired |
| US6844583B2 | Ferroelectric memory devices having expanded plate lines | Electricity | 5 | Expired |
| US6603169B2 | Ferroelectric capacitors for integrated circuit memory devices and methods of manufacturing same | Electricity | 5 | Expired |
| US6798010B2 | Ferroelectric memory devices | Electricity | 3 | Expired |
| US7504266B2 | Magnetic tunnel junction structures and methods of fabrication | Electricity | 2 | Expired |
| US7208367B2 | Methods of fabricating ferroelectric memory devices having expanded plate lines | Electricity | 1 | Expired |
| US7285810B2 | Ferroelectric memory devices having expanded plate lines | Electricity | 0 | Expired |
| US7045416B2 | Methods of manufacturing ferroelectric capacitors for integrated circuit memory devices | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.