Semiconductor device with groove type channel structure
US6664592B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2002 |
| Grant date | Dec 16, 2003 |
| Priority date | — |
| Expiry date | Dec 30, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/90
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate, a gate insulator film formed on a bottom surface and a side surface of a groove formed in the semiconductor substrate, a gate electrode having a lower portion buried in the groove on whose bottom and side surface the gate insulator film is formed, and an upper portion protruding a surface of said semiconductor substrate, and source region and a drain region formed on a surface of the semiconductor substrate in such a way as to sandwich the gate electrode. A thickness of the upper portion of the gate electrode protruding the surface of the semiconductor substrate is equal to or greater than twice a thickness of the lower portion of the gate electrode buried in the groove.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.