Polysilicon back-gated SOI MOSFET for dynamic threshold voltage control
US6664598B1 · kind B1 · utility
19Cited by
9References
9Claims
0Family size
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Key dates
| Filing date | Sep 5, 2002 |
| Grant date | Dec 16, 2003 |
| Priority date | — |
| Expiry date | Sep 5, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6743
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) device is provided. The SOI MOSFET device includes a polysilicon back-gate which controls the threshold voltage of a polysilicon-containing front-gate. The back-gate functions as a dynamic threshold voltage control system in the SOI MOSFET device because it is suitable for use during circuit/system active periods and during circuit/system idle periods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.