Inventor · Somers, NY, US

Wilfried E. Haensch

97Patents
17h-index
90Co-inventors
87Inventor score

Filing activity: Nov 22, 1996 → Apr 30, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US7923337B2 Fin field effect transistor devices with self-aligned source and drain regions Emerging Cross-Sectional Technologies 216 Active
US7089515B2 Threshold voltage roll-off compensation using back-gated MOSFET devices for system high-performance and low standby power Electricity 127 Expired
US7750682B2 CMOS back-gated keeper technique Electricity 120 Active
US7989900B2 Semiconductor structure including gate electrode having laterally variable work function Electricity 103 Active
US7132323B2 CMOS well structure and method of forming the same Electricity 98 Expired
US8637359B2 Fin-last replacement metal gate FinFET process Electricity 64 Active
US9287362B1 Vertical field effect transistors with controlled overlap between gate electrode and source/drain contacts Electricity 52 Active
US9312383B1 Self-aligned contacts for vertical field effect transistors Electricity 38 Active
US5858866A Geometrical control of device corner threshold Emerging Cross-Sectional Technologies 28 Expired
US7018873B2 Method of making a device threshold control of front-gate silicon-on-insulator MOSFET using a self-aligned back-gate Electricity 26 Expired
US8441084B2 Horizontal polysilicon-germanium heterojunction bipolar transistor Electricity 26 Active
US8455932B2 Local interconnect structure self-aligned to gate structure Electricity 24 Active
US7273785B2 Method to control device threshold of SOI MOSFET's Electricity 23 Expired
US8455313B1 Method for fabricating finFET with merged fins and vertical silicide Electricity 22 Active
US8247895B2 4D device process and structure Electricity 21 Active
US6812527B2 Method to control device threshold of SOI MOSFET's Electricity 20 Expired
US6664598B1 Polysilicon back-gated SOI MOSFET for dynamic threshold voltage control Electricity 19 Expired
US8080838B2 Contact scheme for FINFET structures with multiple FINs Electricity 16 Active
US8969965B2 Fin-last replacement metal gate FinFET Electricity 16 Active
US8860107B2 FinFET-compatible metal-insulator-metal capacitor Electricity 16 Active
US6815296B2 Polysilicon back-gated SOI MOSFET for dynamic threshold voltage control Electricity 13 Expired
US8592280B2 Fin field effect transistor devices with self-aligned source and drain regions Emerging Cross-Sectional Technologies 13 Active
US8531001B2 Complementary bipolar inverter Electricity 12 Active
US9397226B2 Vertical field effect transistors with controlled overlap between gate electrode and source/drain contacts Electricity 12 Active
US7479418B2 Methods of applying substrate bias to SOI CMOS circuits Electricity 11 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.