Dopant diffusion blocking for optoelectronic devices using InAlAs and/or InGaAlAs
US6664605B1 · kind B1 · utility
16Cited by
15References
52Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2000 |
| Grant date | Dec 16, 2003 |
| Priority date | — |
| Expiry date | Mar 31, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for decreasing the diffusion of dopant atoms in the active region, as well as the interdiffuision of different types of dopant atoms among adjacent doped regions, of optoelectronic devices is disclosed. The method of the present invention employs a plurality of InAlAs and/or InGaAlAs layers to avoid the direct contact between the dopant atoms and the active region, and between the dopant atoms in adjacent blocking structures of optoelectronic devices. A semi-insulating buried ridge structure, as well as a ridge structure, in which the interdiffusion of different types of dopant atoms is suppressed are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.