Semiconductor device and manufacturing method thereof
US6664624B2 · kind B2 · utility
20Cited by
11References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 30, 2002 |
| Grant date | Dec 16, 2003 |
| Priority date | — |
| Expiry date | May 30, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49087
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A source electrode, a gate electrode, and a drain electrode formed on a front face active region of a semiconductor substrate in a shape of teeth of a comb are covered with an insulating film such as polyimede etc., as well as all of the upper surface and the side surfaces of the insulating film are covered with a metal protective film. Via hole receiving pads connected to the source electrode, the gate electrode, and the drain electrode are respectively connected to bonding pads on a reveres face of the semiconductor substrate through via holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.