Method for the preparation of an epitaxial silicon wafer with intrinsic gettering
US6666915B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2003 |
| Grant date | Dec 23, 2003 |
| Priority date | — |
| Expiry date | Mar 19, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3225
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention is directed to a novel process for the preparation of a silicon wafer comprising a surface having an epitaxial layer deposited thereon. In one embodiment, an epitaxial layer is deposited onto a surface of a silicon wafer. The wafer is also heated to a temperature of at least about 1175° C. This heat treatment begins either during or after the epitaxial deposition. Following the heat treatment, the heated wafer is cooled for a period of time at a rate of at least about 10° C./sec while (a) the temperature of the wafer is greater than about 1000° C., and (b) the wafer is not in contact with a susceptor. In this process, the epitaxial deposition, heating, and cooling are conducted in the same reactor chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.