Chemical vapor deposition apparatus and chemical vapor deposition method
US6666921B2 · kind B2 · utility
12Cited by
18References
16Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Feb 22, 2002 |
| Grant date | Dec 23, 2003 |
| Priority date | — |
| Expiry date | Feb 22, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/14
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a chemical vapor deposition apparatus for a semiconductor film, containing a horizontal tubular reactor, a susceptor, a heater, a feed gas introduction portion and a reaction gas exhaust portion, where part of the tubular reactor walls inclines downward from the upstream side of the feed gas passageway towards the downstream side thereof. The present invention also provides a chemical vapor deposition method using the apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.