Method for forming transistor of semiconductor device
US6667200B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2002 |
| Grant date | Dec 23, 2003 |
| Priority date | — |
| Expiry date | Dec 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a transistor of a semiconductor device, including the step of forming channel layers of a first and a second conductive types, performing high temperature thermal process to form stabilized channel layers and forming an epitaxial channel structure having a super-steep-retrograde &dgr;-doped layer by growing undoped silicon epitaxial layers, treating the entire surface of the resulting structure with hydrogen, forming an epitaxial channel structure by growing undoped silicon epitaxial layers on the stabilized channel layers, forming gate insulating films and gate electrodes on the epitaxial channel structures, re-oxidizing the gate insulating films for repairing damaged portions of the gate insulating films; and forming a source/drain region and performing a low temperature thermal process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.