Methods for forming semiconductor device capacitors that include an adhesive spacer that ensures stable operation
US6667209B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2003 |
| Grant date | Dec 23, 2003 |
| Priority date | — |
| Expiry date | Jan 24, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
In a method for forming capacitors of semiconductor devices, a contact plug penetrating an interlayer dielectric (ILD) is formed on a semiconductor substrate. A supporting layer, an etch stop layer, and a molding layer are sequentially formed on the semiconductor substrate where the contact plug is formed. The molding layer is patterned to form a molding pattern. At this time, the molding pattern has an opening exposing an etch stop layer over the contact plug. Next, an adhesive spacer is formed on sidewalls of the opening. The etch stop layer and the supporting layer, which are exposed through the opening where the adhesive spacer is formed, are successively patterned. Thus, the etch stop pattern and the supporting pattern are formed to expose the contact plug. A lower electrode and a sacrificial pattern are formed to sequentially fill a hole region surrounded by sidewalls of the adhesive spacer, the etch stop pattern, and the supporting pattern. After removing the molding pattern and the sacrificial pattern, the adhesive spacer is removed. At this time, the adhesive spacer is composed of a material having good adhesion and high etch selectivity with respect to the etch stop patte…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.