Chemical mechanical polishing of copper-oxide damascene structures
US6667239B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2002 |
| Grant date | Dec 23, 2003 |
| Priority date | — |
| Expiry date | Jan 23, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of chemical mechanical polishing of a metal damascene structure which includes an insulation layer having trenches on a wafer and a metal layer having a lower portion located in trenches of the insulation layer and an upper portion overlying the lower portion and the insulation layer is provided. The method comprises a first step of planarizing the upper portion of the metal layer and a second step of polishing the insulation layer and the lower portion of the metal layer. In the first step of planarizing the upper portion of the metal layer, the wafer and a polishing pad is urged at an applied pressure p and a relative velocity v in a contact mode between the wafer and the polishing pad to promote an increased metal removal rate. In the second, the insulation layer and the lower portion of the metal layer are polished in a steady-state mode to form individual metal lines in the trenches with minimal dishing of the metal lines and overpolishing of the insulation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.