Patent · US Expired

Semiconductor configuration with ohmic contact-connection and method for contact-connecting a semiconductor configuration

US6667495B2 · kind B2 · utility

7Cited by

16References

21Claims

0Family size

Assignee

SciCED Electronics Development GmbH & Co. KG · DE

Inventors

Peter Friedrichs · Koblenzer Straße, DE
Dethard Peters · Edenkoben, DE
Reinhold Schorner · Großenseebach, DE

Key dates

Filing date	Dec 8, 2000
Grant date	Dec 23, 2003
Priority date	—
Expiry date	May 22, 2021

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/931
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor configuration with ohmic contact-connection includes a first and a second semiconductor region made of silicon carbide, each having a different conduction type. A first and a second contact region serve for contact-connection. The first contact region and the second contact region have an at least approximately identical material composition which is practically homogeneous within the respective contact region. A method is provided for contact-connecting n-conducting and p-conducting silicon carbide, in each case with at least approximately identical material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.