Thin film multi-layer high Q transformer formed in a semiconductor substrate
US6667536B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2001 |
| Grant date | Dec 23, 2003 |
| Priority date | — |
| Expiry date | Oct 5, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/4902
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin-film multi-layer high Q transformer. To form an outer transformer winding a plurality of parallel first level metal runners are formed in a first insulating layer overlying the semiconductor substrate. A plurality of vertical conductive vias are formed in third and fourth insulating layers and in electrical communication with each end of the first level metal runners. A fourth insulating layer is disposed over the third insulating layer and additional vertical conductive vias and a fourth level metal runner are formed therein. Thus, the fourth level metal runners and the intervening vertical conductive vias connect each of the first level metal runners to form a continuously conductive structure having a generally helical shape. The inner winding of the transformer is similarly formed. A plurality of parallel second level metal runners are formed within the second insulating layer and a plurality of conductive vias and third level metal runners are formed within the third insulating layer to interconnect the plurality of second level metal runners to form a continuously conductive structure having a generally helical shape and disposed at least partially within the outer tra…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.